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SA5223 Wide dynamic range AGC transimpedance amplifier (150MHz)
Product specification IC19 Data Handbook 1995 Oct 24
Philips Semiconductors
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier with differential outputs, incorporating AGC and optimized for signal recovery in wide-dynamic-range fiber optic receivers, such as SONET. The part is also suited for many other RF and fiber optic applications as a general purpose gain block. The SA5223 is the first AGC amplifier to incorporate internal AGC loop hold capacitor, therefore, no external components are required. The internal AGC loop enables the SA5223 to effortlessly handle bursty data over a range of nA to mA of signal current, positive direction (sinking) only.
PIN DESCRIPTION
D Package
GND3 GND1 IN GND4 1 2 3 4 8 7 6 5 VCC OUT OUT GND2
SD00369
FEATURES
* Extremely low noise: 1.17pA Hz * Single 5V supply * Low supply current: 22mA * Large bandwidth: 150MHz * Differential outputs * Internal hold capacitor * Low input/output impedances * High power-supply-rejection ratio: 55dB * Tight transresistance control * High input overload: 4mA * 2000V HBM ESD protection
ORDERING INFORMATION
DESCRIPTION 8-Pin Plastic Small Outline For unpackaged die please contact factory.
APPLICATIONS
* OC3 SONET preamp (see AN1431 for detailed analysis * Current-to-voltage converters * Wide-band gain block * Medical and scientific instrumentation * Sensor preamplifiers * Single-ended to differential conversion * Low noise RF amplifiers * RF signal processing
TEMPERATURE RANGE -40 to +85C
ORDER CODE SA5223D
DWG # SOT96-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC TA TJ TSTG PD IINMAX Power supply voltage Ambient temperature range Junction temperature range Storage temperature range Power dissipation TA = 25oC (still air)1 Maximum input current PARAMETER RATING 6 -40 to +85 -55 to +150 -65 to +150 0.78 5 UNITS V
C C C
W mA
NOTE: 1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance JA = 158oC/W. Derate 6.2mW/C above 25C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Power supply voltage Ambient temperature range: SA grade Junction temperature range: SA grade PARAMETER RATING 4.5 to 5.5 -40 to +85 -40 to +105 UNITS V
C C
1995 Oct 24
2
853-1816 15939
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25C, and VCC = +5V, unless otherwise specified. SYMBOL VIN VO VOS PARAMETER Input bias voltage Output bias voltage Output offset voltage (VPIN6 - VPIN7) TEST CONDITIONS SA5223 Min 1.3 2.9 -200 Typ 1.55 3.2 80 Max 1.8 3.5 +200 UNIT V V mV mA mA
ICC Supply current 15 22 29 IOMAX Output sink/source current 1.5 2 NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25C and VCC = +5V, unless otherwise specified. SYMBOL RT RT RO RO f3dB RIN CIN CINT R/V R/T IIN PARAMETER Transresistance (differential output) Transresistance (single-ended output) Output resistance (differential output) Output resistance (single-ended output) Bandwidth (-3dB) Input resistance Input capacitance1 Input capacitance including Miller multiplied capacitance Transresistance power supply sensitivity Transresistance ambient temperature sensitivity RMS noise current spectral density (referred to input)2 Integrated RMS noise current over the bandwidth (referred to inp t) idth input) CS = 0.1pF 0.1 F IT CS = 0.4pF PSRR PSRR VOLMAX dR T dt IINMAX tr, tf tD Power supply rejection ratio (change in VOS) Power supply rejection ratio3 Maximum differential output AC voltage AGC loop time constant parameter4 Maximum input amplitude for output duty cycle of 50 5% Output rise and fall times Group delay TEST CONDITIONS DC tested, RL = , IIN = 0-1A DC tested, RL = , IIN = 0-1A DC tested DC tested Test Circuit 1 DC tested 110 SA5223 Min 90 45 Typ 125 62.5 140 70 150 250 0.7 4.0 VCC1 = VCC2 = 5 0.5V TA = TA MAX - TA MIN Test Circuit 2, f = 10MHz Test circuit 2, f = 50MHz f = 100MHz f = 150MHz f = 50MHz f = 100MHz f = 150MHz DC Tested, VCC = 0.5V f = 1.0MHz, Test Circuit 3 Ii = 0-2mA peak AC 10A to 20A steps Test circuit 4 10 - 90% f = 10MHz 3 0.09 1.17 7 12 16 8 13 18 -55 -20 800 1 +2 2.2 2.2 dB dB mV dB/ms mA ns ns nA Max 160 80 UNIT k k MHz pF pF %/V %/oC pA Hz
NOTES: 1. Does not include Miller-multiplied capacitance of input device. 2. Noise performance measured differential. Single-ended output noise is higher due to CM noise. 3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line. 4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit Error Rate (BER) for 100,000 cycles at 100MHz).
1995 Oct 24
3
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
TEST CIRCUITS
SINGLE-ENDED R TSE + 12.4 @ S 21 @ R IN, R IN + 1k ) R INSS [ 1250W SPECTRUM ANALYZER 50
NETWORK ANALYZER
S-PARAMETER TEST SET PORT1 ZO = 50 0.1uF R=1k 50 GND1 VCC 500 OUT IN DUT OUT .1uF CS GND1 PORT2 ZO = 50
VCC .1F OUT IN DUT OUT GND2 .1F NE5209 1.0F 50 1.0F
500 .1uF GND2 50
Test Circuit 2: Noise Test Circuit 1: Bandwidth
SD00370 SD00371
5V
BIAS TEE
NETWORK ANALYZER
S-PARAMETER TEST SET PORT1 50 0.1uF VCC OUT IN DUT OUT GND2 .1uF .1uF 100 BAL. NHO300HB 50 UNBAL. CAL TRANSFORMER CONVERSION LOSS = 9dB PORT2
NC GND1
Test Circuit 3: PSRR
SD00372
50% DUTY CYCLE PULSE GEN OFFSET 0.1uF IN 1k 50 GND1
5V
500 OUT DUT OUT GND2 500
.1F A ZO = 50
OSCILLOSCOPE .1F B ZO = 50
Meaurement done using differential wave forms
Test Circuit 4: Duty Cycle Distortion
SD00373
1995 Oct 24
4
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
GND
1
8
VCC
G1
2
NC NC
PAD CENTER LOCATIONS X(mm) Y(mm) 7 OUT GND1 IN GND2 OUT OUTB VCC -0.400 -0.400 +0.400 +0.400 +0.400 +0.400 -0.053 -0.223 -0.342 -0.046 +0.154 +0.380
IN
3
NC
6
OUTB
DIE SIZE X(mm) Y(mm) 1.08 1.32
GND
4
5
G2
SD00507
Figure 1. SA5223 Bonding Diagram
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack
carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales.
1995 Oct 24
5
1995 Oct 24
+5V TOP PLANE BOTTOM PLANE L1 10uH R2 0 C1 0.1uF C5 0.1uF U2 1 CAZN CAZP VREF VccE D_OUT D_OUT GND_E ST ST NE5224 C9 0.1uF +3.2V L2 10uH + C10 4.7uF +5V +5V R6 130 R7 82 C11 0.1uF GNDA D_IN D_IN VccA CF JAM 15 14 13 12 11 10 9 R5 5 C12 0.1uF R10 130 R8 5 R11 3k R12 1.8k +5V R9 82 DOUT VSET 16 U1 Vcc OUT OUT GND2 7 C8 0.1uF 8 5 C8 0.1uF 6 R4 120 6 5 7 C4 4.7pF 4 8 3 C6 0.1uF 2 C3 0.1uF C13 0.1uF R3 120 SA5223
Philips Semiconductors
R1 100
C2 0.1uF
D1*
1
GND3
2
GND1
3
Wide dynamic range AGC transimpedance amplifier(150MHz)
Figure 2. SONET Test Board -- 155Mb/s (1300nm)
6
IN
4
GND4
*D1: 1A358 - = 1300nm DOUT
ABB HAFO 1.5GHz PIN DIODE
SD00521
ANALOG GND
DIGITAL GND
Product specification
SA5223
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
SA5223/5224 SONET - 155MB/s FO11000
GND
+5V
R3
R4
C10
GND
C6
C7
GND
+5V
L1
U1
U2
C5
C13
R11
TOP VIEW
BOTTOM VIEW
SD00522
Figure 3. SA5223 Board Layout (NOT ACTUAL SIZE)
1995 Oct 24
7
Dout
GND R12 C12 R8 R7 R6
C4 R10 R5 R9
C9 C8 C11 Dout D1
L2
C3 R2 C1 R1 C2
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
28.00
100 90 VCC = 5.5V VCC = 5.0V VOS (mV) 80 70 VCC = 4.5V 60 50 40 -50 -25 0 25 50 TEMPERATURE (C) 75 100 SD00527 VOS = (IIN = 0) = VOUT - VOUT RL = INFINITY VCC = 5.5V VCC = 5.0V
26.00 SUPPLY CURRENT (mA)
24.00
22.00 VCC = 4.5V
20.00
18.00
16.00 -50
-25
0
25
50
75
100
TEMPERATURE (C)
SD00530
Figure 4. SA5223 ICC vs Temperature
Figure 7. SA5223 Output VOS vs Temperature
3.500
1.900 1.800 SUPPLY CURRENT (mA) 1.700 1.600 1.500 1.400 1.300 VCC = 5.5V VCC = 5.0V VCC = 4.5V
3.400 VOUT 3.300 (V) RL = INFINITY VCC = 5.0V, Temperature = 25C
V OUT
3.200
3.100 VOUT 3.000
2.900 1.200 -50 0 -25 0 25 50 TEMPERATURE (C) 75 100 SD00528 1 2 3 4 5 6 7 8 9 10 DC INPUT CURRENT (A)
SD00531
Figure 5. SA5223 Input VBIAS vs Temperature
Figure 8. SA5223 Output Voltage vs DC Input Current (for small input current)
4.200 4.000 RL = INFINITY VCC = 5.0V, Temperature = 25C VOUT
3.800
3.600 OUTPUT VBIAS (V)
VCC = 5.5V
3.800 3.600
3.400 VOUT (V)
3.400 3.200 3.000 2.800 2.600 VOUT
3.200
VCC = 5.0V
3.000
2.800
VCC = 4.5V
2.400 2.200
2.600 -50
2.000 -25 0 25 50 TEMPERATURE (C) 75 100 SD00529 1 10 100 1000 DC INPUT CURRENT (A LOG) 10000 SD00532
Figure 6. SA5223 Output VBIAS vs Temperature
Figure 9. SA5223 Output Voltage vs DC Input Current (for large input current)
1995 Oct 24
8
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
0.350 0.300 0.250 0.200 0.150 0.100 0.050 0.000 0 1 2 3 7 4 5 6 DC INPUT CURRENT (A) 8 9 10 RL = INFINITY VCC = 5.0V, Temperature = 25C VOD = VOUT - VOUT - VOS (V)
1000 85C 25C 100 RT (K , LOG) -40C 10 RL = INFINITY VCC = 5.0V Temperature = -40, 25, 85C RT = VOD / IIN
VOD
1
0 1 10 100 DC INPUT CURRENT (A LOG) 1000 10000
SD00533
SD00536
Figure 10. SA5223 Differential Output vs DC IIN (for small input current)
160 1.800 1.600 1.400 (V) 1.200 1.000 V OD 0.800 0.600 0.400 0.200 0 0.000 1 10 100 1000 DC INPUT CURRENT (A, LOG) 10000 0 RL = INFINITY VCC = 5.0V, Temperature = 25C VOD = VOUT - VOUT - VOS 140 120
Figure 13. SA5223 Differential RT vs DC IIN (for large input current)
RL = INFINITY VCC = 5.0V Temperature = 25C RT = VOD / IIN VCC = 5.5V
RT (K )
100 80 VCC = 4.5V 60 40 20 VCC = 5.0V
1
2
3
4 5 6 7 DC INPUT CURRENT (A)
8
9 10 SD00537
SD00534
Figure 11. SA5223 Differential Output vs DC IIN
Figure 14. SA5223 Differential RT vs DC IIN (for small input current)
160 85C 140 120 RT (K ) 100 80 60 40 -40C 25C RL = INFINITY VCC = 5.0V Temperature = -40, 25, 85C RT = VOD / IIN
1000 RL = INFINITY VCC = 4.5, 5.0, 5.0V Temperature = 25C RT = VOD / IIN
100 RT (K , LOG) 25C 10
85C 1 -40C
20 0
0 1 0 1 2 3 4 5 6 7 DC INPUT CURRENT (A) 8 9 10 SD00535 10 100 1000 DC INPUT CURRENT (A LOG) 10000
SD00538
Figure 12. SA5223 Differential RT vs DC IIN (for small input current)
Figure 15. SA5223 Differential RT vs DC IIN (for large input current)
1995 Oct 24
9
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
16 14 12 S 21 GROUP DELAY (ns) 10 S21 (dB) 8 6 4 2 0 -2 -4 1 10 FREQUENCY (MHz) 100 -40C 0C 25C 70C 85C 300 SD00539 VCC = 5.0V SINGLE-ENDED OUTPUT
9 8 7 6 5 4 3 2 1 0 -1 START = 1MHz FREQUENCY (MHz, LINEAR) STOP = 200MHz SD00541 SINGLE-ENDED OUTPUT TEMPERATURE = 25C VCC = 5.0V
Figure 16. Insertion Gain vs Frequency
Figure 18. Group Delay vs Frequency
16 14 12 10 S 21 (dB) 8 6 4 2 0 -2 -4 1 VCC = 5.5V VCC = 5.0V VCC = 4.5V INPUT NOISE (PA/ Hz) TEMPERATURE = 25C SINGLE-ENDED OUTPUT
10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 10 FREQUENCY (MHz) 100 300 SD00540 1 10 FREQUENCY (MHz) 100 300 VCC = 5.0V Temperature = 25C CS = 0pF
SD00542
Figure 17. Insertion Gain vs Frequency
Figure 19. SA5223 Input Current RMS Noise Spectral Density
1995 Oct 24
10
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier (150MHz)
SA5223
SO8: plastic small outline package; 8 leads; body width 3.9mm
SOT96-1
1995 Oct 24
11
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier (150MHz)
SA5223
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 2000 All rights reserved. Printed in U.S.A. Date of release: 08-98 Document order number: 9397 750 06831
Philips Semiconductors
1995 Oct 24 12


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